Profiles of carrier concentration vs. depth.
Solecon Laboratories is a specialized analytical laboratory providing dopant profiling services to the semiconductor manufacturing industry. Our expertise is in Spreading Resistance Analysis. The company was founded in 1975 in southern California. We relocated to Silicon Valley where the lab operated for nearly 25 years. In 2001, we moved to our state-of-the-art-facility in Reno, Nevada.
We provide front-end process engineers/scientists with timely and cost-effective characterization of resistivity and concentration vs depth profiles in silicon and germanium, with resolutions down to the nanometer range. Spreading Resistance Analysis (SRA) is especially useful for its depth accuracy (+/-3%) and sensitivity to ultra-low dopant concentrations. SRA is helpful for checking the results of any resistivity altering process and is used extensively for Epitaxial deposition - thickness, resistivity, and auto-doping issues, Ion implant verification after activation, Dopant contamination issues, Diffusions in general - deep or shallow.